在庫:5,934
Powerex Inc.
1200V, 75A N-Channel Trans IGBT Module, 600mW, 35-Pin
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在庫:5,934
1200V, 75A N-Channel Trans IGBT Module, 600mW, 35-Pin
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IGBT Modules CM75TX-24S 6-PAC
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Powerex Inc.
High-Power Transistor Module: N-Type, 600 Volts, 800 Amps, 7-Pin Configuration
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High-Power Transistor Module: N-Type, 600 Volts, 800 Amps, 7-Pin Configuration
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High-power IGBT Semiconductor
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Microchip Technology
IGBT Chip, N-CH, 1200V, 215A, 625000mW, 4-Pin SOT-227 Tube
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IGBT Chip, N-CH, 1200V, 215A, 625000mW, 4-Pin SOT-227 Tube
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Powerex Inc.
CM15TF-24H is a high-power N-channel IGBT module rated for 1.2KV and 15A
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CM15TF-24H is a high-power N-channel IGBT module rated for 1.2KV and 15A
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Powerex Inc.
IGBT module with a half bridge topology designed for chassis mounting
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IGBT module with a half bridge topology designed for chassis mounting
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N-Channel 600V 150A
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4-Pin N-Channel 1200V 600A 1900W Transistor Module
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Infineon Technologies
Suitable for various power electronic applications requiring high voltage and current capabilities
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Suitable for various power electronic applications requiring high voltage and current capabilities
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1200V 580A Power Module
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Ixys Integrated Circuits Division
IXYN100N65A3 IGBTs, under the XPT-GENX3 (MINI) designation, offer enhanced performance for power switching tasks
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IXYN100N65A3 IGBTs, under the XPT-GENX3 (MINI) designation, offer enhanced performance for power switching tasks
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Infineon Technologies
DDB6U30N08VR: High-power N-Channel Insulated Gate Bipolar Transistor
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DDB6U30N08VR: High-power N-Channel Insulated Gate Bipolar Transistor
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N-Channel 1200V 400A
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Compact 7-Pin IGBT Module with low power dissipation
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Powerex Inc.
N-channel Insulated Gate Bipolar Transistor (IGBT) Module, rated at 600V and 100A, with 400mW power dissipation, presented in an 18-pin configuration
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N-channel Insulated Gate Bipolar Transistor (IGBT) Module, rated at 600V and 100A, with 400mW power dissipation, presented in an 18-pin configuration
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600W Powerex IGBT Array & Module
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100A-rated IGBT Modules with a voltage rating of 1.2KV."
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IGBT Modules IGBT MODULE T-SERIES 6-PAC NX TYPE
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Contact for details
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Infineon Technologies
N-Channel Silicon Carbide Power MOSFET 1.2KV 50A 22-Pin Tray
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N-Channel Silicon Carbide Power MOSFET 1.2KV 50A 22-Pin Tray
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7-Pin IGBT Module, 1200V, 200A, N-channel
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Voltage capacity: 1200V
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Infineon Technologies
IGBT module with six N-channel transistors, operating at 750V and 450A, with a power rating of 714W. Compliant with RoHS regulations
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IGBT module with six N-channel transistors, operating at 750V and 450A, with a power rating of 714W. Compliant with RoHS regulations
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Mitsubishi Materials U.S.A. Corporation
IGBT Modules for High Power Applications
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IGBT Modules for High Power Applications
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N-Channel IGBT Modules rated at 600V and 25A
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Product FS820R08A6P2BBPSA1
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Presenting the CPV364M4K
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1130W Power Trans IGBT Module
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Mitsubishi Materials U.S.A. Corporation
Dual IGBT Modules from the S-Series line
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Dual IGBT Modules from the S-Series line
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Infineon Technologies
N-channel Trans IGBT module capable of handling 1200V and 1.2KA, designed for high power applications
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N-channel Trans IGBT module capable of handling 1200V and 1.2KA, designed for high power applications
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FF1000R17IE4P Insulated Gate Bipolar Transistor
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High-Power Transistor Module with N-channel IGBT"
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Vishay
CPV362M4U boasts a power rating of 23W and is designed for reliable operation in various applications
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CPV362M4U boasts a power rating of 23W and is designed for reliable operation in various applications
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Powerex Inc.
IGBT Module for Transistor Applications, N-Type, 600 Volts, 150 Amperes
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IGBT Module for Transistor Applications, N-Type, 600 Volts, 150 Amperes
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FP150R07N3E4: 430W 150A 650V FS IGBTs - ROHS certified
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Described as a Trans IGBT Module
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Powerex Inc.
Transistor Insulated Gate Bipolar Transistor (IGBT) Module for High-Power Applications
在庫:6,172
Transistor Insulated Gate Bipolar Transistor (IGBT) Module for High-Power Applications
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Infineon Technologies
FF1200R17KE3 stands out as an IGBT module featuring dual functionality, operating at 1700V and 1200A, for robust performance
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FF1200R17KE3 stands out as an IGBT module featuring dual functionality, operating at 1700V and 1200A, for robust performance
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ECONO-3 tray packaging
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Powerex Inc.
The CM50E3U-24H is suitable for high-power applications that require efficient switching and control
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The CM50E3U-24H is suitable for high-power applications that require efficient switching and control
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Infineon Technologies
High-Voltage IGBT Transistors Optimized for Power Inverter Systems (Product Code: FZ1200R12HE4P)
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High-Voltage IGBT Transistors Optimized for Power Inverter Systems (Product Code: FZ1200R12HE4P)
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Infineon Technologies
Trans IGBT Module N-Channel 1700V 2.3KA 8950mW 7-Pin IHM130-2 Tray
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Trans IGBT Module N-Channel 1700V 2.3KA 8950mW 7-Pin IHM130-2 Tray
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IGBT Transistor Module with N-Type Channel
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1100mW power dissipation