在庫:6,400
Powerex Inc.
75A 600V N-CH Transistor Module
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在庫:6,400
75A 600V N-CH Transistor Module
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High-power N-type IGBT Module rated for 1.2KV and 75A
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FS30R06W1E3 product specifications: N-Channel IGBT Module, 600V, 45A, 150mW, 18 Pin Configuration, EASY1B-1 Tray included
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FS30R06W1E3 product specifications: N-Channel IGBT Module, 600V, 45A, 150mW, 18 Pin Configuration, EASY1B-1 Tray included
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Infineon Technologies
This product, FS35R12W1T4, is an IGBT module designed for N-channel operation with a voltage rating of 1.2KV and a maximum current of 65A
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This product, FS35R12W1T4, is an IGBT module designed for N-channel operation with a voltage rating of 1.2KV and a maximum current of 65A
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Type: IGBT Module
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IGBT Transistor Module for N-Channel Operation, 600V and 150A
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Powerex Inc.
The CM15TF-12H product is a 17-pin Trans IGBT Module, with N-channel operation, engineered to handle 15A of current and 600V of voltage
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The CM15TF-12H product is a 17-pin Trans IGBT Module, with N-channel operation, engineered to handle 15A of current and 600V of voltage
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Transistor IGBT Module N-Channel 600V 75A
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Vishay General Semiconductor - Diodes Division
CPV363M4K Product Description: N-Channel Transistor IGBT Module, 600V, 11A, 36W, 13-Pin IMS-2
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Microchip Technology
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N-type Transistor Insulated Gate Bipolar Junction Transistor (IGBT) Module rated for 600V voltage
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Vishay General Semiconductor - Diodes Division
Trans IGBT Module N-CH 600V 13A 13-Pin IMS-2
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Automotive Trans IGBT Module N-CH 1700V 950A with 11-Pin ECONOD-3 Tray
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Module Trans IGBT N-CH 1200V 288A 1087000mW
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Infineon
With its advanced EconoPACK3 configuration, product FS150R06KE3 combines a rapid trench/fieldstop IGBT with an EmCon3 diode
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With its advanced EconoPACK3 configuration, product FS150R06KE3 combines a rapid trench/fieldstop IGBT with an EmCon3 diode
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Integrated Gate Bipolar Transistor modules
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Maximum power dissipation of 15000mW
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Infineon Technologies
IGBT Trans Module, N-Channel, 600V, 130A, 445W, 7-Pin, 34mm-1 Tray
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IGBT Trans Module, N-Channel, 600V, 130A, 445W, 7-Pin, 34mm-1 Tray
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Infineon Technologies
IGBT Module Designed for Robust Short Circuit Performance
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IGBT Module Designed for Robust Short Circuit Performance
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IGBT Module: Three-Phase Inverter, 600V, 16A, Through Hole Mounting IMS-2
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Powerex Inc.
This module, identified as CM100TF-24H, embodies a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) with a capacity of 1
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This module, identified as CM100TF-24H, embodies a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) with a capacity of 1
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IGBT Module Half Bridge 250V 600A 1100W Chassis Mount Module
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150 A 4500 V N-CHANNEL IGBT
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Infineon Technologies
Product F3L300R07PE4 is an IGBT Module capable of handling currents up to 300A and voltages up to 650V
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Product F3L300R07PE4 is an IGBT Module capable of handling currents up to 300A and voltages up to 650V
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This N-Channel IGBT module
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Powerex Inc.
CM300HA-12H is a N-channel 600V IGBT module with a current rating of 300A
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CM300HA-12H is a N-channel 600V IGBT module with a current rating of 300A
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Infineon Technologies
The FF150R12ME3G IGBT module delivers a power output of 695W and can manage currents of up to 200A at 1
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Infineon Technologies
BSM150GB60DLC is an Insulated Gate Bipolar Transistor capable of handling 180A of collector current and featuring a breakdown voltage of 600V
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