|
APT60M75JVR
|
APT60M75JVR MOSFET boasts a power handling capacity of 700W at 10V and exhibits a low gate threshold voltage of 4V at 5mA |
Microchip Technology |
8,543 |
|
|
IXSN80N60BD1
|
N-Channel 600V 160A IGBT Chip |
IXYS |
6,998 |
|
|
GB75DA120UP
|
Insulated Gate Bipolar Transistor with N-Channel and ROHS Compliant Package-4 |
vishay |
8,709 |
|
|
IXYN50N170CV1
|
880W power IGBTs with 120A current capacity |
IXYS |
7,855 |
|
|
IXGN200N170
|
RoHS compliant 1.7kV IGBT |
IXYS |
9,859 |
|
|
IXFN70N120SK
|
Field-effect transistor for power applications |
IXYS |
5,238 |
|
|
IXFN50N120SK
|
Lead-free MOSFETs in SOT-227B package |
IXYS |
5,266 |
|
|
GB2X100MPS12-227
|
silicon carbide power |
GeneSiC Semiconductor |
8,197 |
|
|
DCG85X1200NA
|
Rectifier diode with Schottky technology |
IXYS |
6,063 |
|
|
DCG45X1200NA
|
DCG45X1200NA Diode |
IXYS |
7,068 |
|
|
DCG130X1200NA
|
112A Schottky Diode |
IXYS |
6,242 |
|
|
DCG100X1200NA
|
2 Element Diode for Rectification |
IXYS |
8,966 |
|
|
DBA200WA60
|
Discrete Semiconductor Modules rated for 400V and capable of handling up to 200A |
SanRex Corporation |
8,589 |
|
|
VS-GT180DA120U
|
Its rugged construction and reliable performance ensure long-term operation in harsh environments and demanding industrial setting |
Vishay General Semiconductor - Diodes Division |
8,027 |
|
|
VS-GT100DA120UF
|
Insulated Gate Bipolar Transistor module rated for 1200 volts and 187 amps, delivering 890 watts in SOT227 configuration |
Vishay |
5,252 |
|
|
APT20M11JFLL
|
200V 176A 11mΩ@88A, 10V 5V@5mA N Channel SOT-227B-4 MOSFETs ROHS |
Microchip Technology |
8,558 |
|
|
APT5010JFLL
|
N-Channel 500V 41A Trans MOSFET SOT-227 |
Microchip Technology |
8,637 |
|
|
G3R20MT12N
|
Silicon Carbide MOSFET N Channel Enhancement Mode |
GeneSiC Semiconductor |
6,500 |
|
|
FA57SA50LC
|
FA57SA50LC N-Channel MOSFET Transistor, 5.7 A, 500 V, 4-Pin SOT-227 Vishay |
Vishay General Semiconductor - Diodes Division |
9,434 |
|
|
APT50M65JFLL
|
CH 500V 58A 4-Pin SOT-227 Tube |
Microchip |
9,881 |
|
|
HGT1N40N60A4D
|
Contact for details |
onsemi |
5,238 |
|
|
APT75GP120J
|
1200V N-Channel IGBT Transistor Module |
Microchip |
9,472 |
|
|
VS-UFB200FA20P
|
Vishay VS-UFB200FA20P, Dual Diode Module, Isolated, 200V 120A, 45ns, 4-Pin SOT-227 |
Vishay General Semiconductor - Diodes Division |
9,613 |
|
|
VBO40-12NO6
|
VBO40 Series 1200 Vrrm 40 A 1.15 Vf Single Phase Rectifier Bridge - SOT-227B |
IXYS |
8,363 |
|
|
TGHGCR0005FE
|
Current Sense Resistors - Through Hole .0005ohm 100watt 1% High Power |
Ohmite |
6,749 |
|
|
IXTN30N100L
|
Channel 1KV 30A SOT-227B Trans MOSFET |
Ixys |
6,896 |
|
|
GA100NA60UP
|
IGBTs rated at 600V and 50A |
Vishay |
9,427 |
|
|
DBA200UA60
|
Independent Channels for 600 V 100A Applications |
Sanrex |
6,605 |
|
|
DSEP2X91-03A
|
Rectifier Diode Switching 300V 90A 40ns 4-Pin SOT-227B Tube |
IXYS |
8,244 |
|
|
DSEP2X61-12A
|
Rectifier Diode Switching 1.2KV 60A 85ns 4-Pin SOT-227B Tube |
IXYS |
6,141 |
|
|
DSEP2X61-03A
|
Rectifier Diode Switching 300V 60A 40ns 4-Pin SOT-227B Tube |
IXYS |
7,642 |
|
|
IXFN21N100Q
|
IXFN21N100Q is a discrete semiconductor module that can handle currents up to 21 Amps and voltages up to 1000V, with a Rds of 0.5 |
Littelfuse |
3,122 |
|
|
IXFN80N50
|
MOSFETs IXFN80N50 SOT-227B ROHS |
Littelfuse |
7,937 |
|
|
APT2X61DQ100J
|
SOT-227 4-Pin Diode Switching 1KV 60A |
Microchip |
3,491 |
|
|
TGHGCR1000FE
|
Precise control and monitoring of power flow with minimal losse |
Ohmite |
7,280 |
|
|
TGHGCR0100FE
|
High-precision resistor for critical circuit applications |
Ohmite |
3,426 |
|
|
IXFN240N15T2
|
High-performance GigaMOS Trench T2 HiperFET |
Ixys |
7,721 |
|
|
TGHGCR0200FE
|
Robust design withstands high temperatures and vibration |
Ohmite |
6,297 |
|
|
TGHGCR0020FE
|
Accurate and reliable power monitorin |
Ohmite |
5,723 |
|
|
TGHGCR0010FE
|
Ultra-high precision current sense resistors, ideal for high-power applications |
Ohmite |
7,202 |
|
