|
IXFN210N20P
|
IXFN210N20P, classified as a Power Field-Effect Transistor, boasts a high current rating of 188A and a voltage tolerance of 200V |
Littelfuse |
5,588 |
|
|
IXFN230N20T
|
The IXFN230N20T is a MOSFET available in the SOT-227B package, meeting ROHS standards |
Littelfuse |
8,908 |
|
|
IXFN32N120P
|
IXFN32N120P High-Power N-Channel Transistor with 32A Current Rating |
IXYS |
5,571 |
|
|
IXFN300N10P
|
100V 295A Transistor |
IXYS |
5,191 |
|
|
IXFN180N20
|
IXFN180N20: Power MOSFET with N-type channel, capable of handling 200 volts and 180 amperes, packaged in 4 pins using SOT-227B standard |
Littelfuse |
5,465 |
|
|
IXFN50N80Q2
|
Power Field-Effect Transistor with 50A I(D) and 800V |
Ixys |
8,747 |
|
|
IXFN44N60
|
A high-power N-Channel Silicon MOSFET designated IXFN44N60, capable of handling 44A Drain Current at 600V Voltage, featuring low On-Resistance of 0 |
Littelfuse |
7,661 |
|
|
IXFN55N50
|
N-channel Power MOSFET, 55 Amps, 500 Volts, 4-Pin SOT-227B |
IXYS |
9,456 |
|
|
IXFN44N80
|
44 Amps Discrete Semiconductor Modules with 800V and 0.145 Rds |
IXYS |
6,240 |
|
|
IXFN34N80
|
ROHS Compliant IXFN34N80 MOSFETs |
IXYS |
5,541 |
|
|
IXFN44N50
|
IXFN44N50 is a discrete semiconductor module capable of handling 500 volts and a current of 44 amperes |
Littelfuse |
7,166 |
|
|
IXFN26N90
|
MOSFETs ROHS IXFN26N90 SOT-227B |
Littelfuse |
8,647 |
|
|
IXFN48N60P
|
Explore the IXFN48N60P: a robust N-channel MOSFET tailored for high-voltage scenarios |
IXYS |
8,060 |
|
|
IXFN62N80Q3
|
SOT227B N-Channel 800 V 140 mOhm 270 nC HyperFET Power MosFet IXFN62N80Q3 |
IXYS |
9,868 |
|
|
IXFN170N10
|
IXFN170N10 SOT-227B MOSFETs ROHS |
IXYS |
9,947 |
|
|
IXFN44N80P
|
PLASTIC MINIBLOC-4 with 0.19ohm |
IXYS |
7,587 |
|
|
IXFN44N100Q3
|
8A 1kV single transistor module SOT227B screw Idm 110A 960W |
IXYS |
8,128 |
|
|
IXFN36N60
|
This discrete semiconductor module, designated as IXFN36N60, is designed for applications requiring 600V and 36A |
IXYS |
9,554 |
|
|
IXFN60N60
|
Semiconductor Modules 600V 60A Discrete |
Littelfuse |
8,114 |
|
|
APT2X101DQ100J
|
Rectifier Diode with 1000V Ultrafast Soft Recovery Technology |
Microchip |
6,636 |
|
|
APT50M50JVFR
|
Four-pin SOT-227 package |
Microchip |
8,018 |
|
|
APT8015JVR
|
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps |
Microchip Technology |
7,750 |
|
|
APT2X61D120J
|
Rectifier Diode Switching 1.2KV 53A 400ns 4-Pin SOT-227 Tube |
Microchip Technology |
8,721 |
|
|
APT2X61D100J
|
Module for Rectifying - High-Speed Recovery/FRED |
Microchip |
8,119 |
|
|
APT2X101DQ60J
|
High-Voltage Diode Switching Module with 100A Current Handling Capability |
Microchip Technology |
7,212 |
|
|
APT2X101D100J
|
Rectifier diode with fast recovery time ideal for power electronics |
Microchip |
6,641 |
|
|
APT2X101D40J
|
Rectifier Diode Switching 400V 100A 50ns 4-Pin SOT-227 Tube |
Microchip Technology |
5,119 |
|
|
APT2X31D60J
|
0A 85ns 4-Pin SOT-227 Tube 600V Rectifier Diode Switching |
Microchip Technology |
5,291 |
|
|
APT100M50J
|
APT100M50J represents a discrete semiconductor module utilizing MOSFET components |
Microchip Technology |
9,027 |
|
|
APT2X61D60J
|
Rectifier Diode Switching 600V 60A 130ns 4-Pin SOT-227 Tube |
Microchip Technology |
9,972 |
|
|
APT2X60D100J
|
4-Pin SOT-227 Tube Rectifier Diode Switching 1KV 55A 280ns |
Microchip Technology |
8,651 |
|
|
APT2X100DQ120J
|
SOT-227 package for APT2X100DQ120J |
Microchip |
6,301 |
|
|
APT10M07JVR
|
Microchip Technology's APT10M07JVR |
Microchip |
5,747 |
|
|
APT2X101D60J
|
Rectifier Diode Switching 600V 100A 180ns 4-Pin SOT-227 Tube |
Microchip Technology |
8,723 |
|
|
APT2X30D100J
|
1KV 28A Diode Switching 4-Pin SOT-227 Rail/Tube |
Microchip Technology |
9,569 |
|
|
APT10M07JVFR
|
APT10M07JVFR Discrete Semiconductor Module: Leveraging FREDFET MOS5 technology |
Microchip Technology |
7,589 |
|
|
APL502J
|
500V MOSFET Discrete Semiconductor Modules FG, 0.12_OHM |
Microchip Technology |
7,506 |
|
|
APT77N60JC3
|
Product APT77N60JC3 is a discrete semiconductor module with a description indicating it's an FG MOSFET |
Microchip Technology |
5,197 |
|
|
APT34M120J
|
A silicon N-channel MOSFET rated for 1.2 kilovolts with a current capacity of 35 amperes, packaged in a 4-pin SOT-227 tube |
Microchip Technology |
8,480 |
|
|
APT50M85JVR
|
APT50M85JVR is a discrete semiconductor module with MOSFET MOS5 technology |
Microchip Technology |
8,609 |
|
|
GA200SA60S
|
Bus Switch Dual 24TSSOP IC FET |
Vishay |
9,866 |
|
|
APT60GT60JRD
|
IGBT Modules FG |
Microchip |
8,666 |
|
|
APT12040JVR
|
Featuring a voltage rating of 1 |
Microchip |
8,398 |
|
|
IXGN72N60C3H1
|
High-power transistor module for switching applications |
IXYS |
5,316 |
|
|
IXTN210P10T
|
SOT-227B-packaged P-channel transistor designed for heavy-duty applications up to 100 volts and 210 amps |
Littelfuse |
9,837 |
|
|
MS0690J-DL1TE
|
SCR Module Diode rated for 600V, 90A (RMS), with Surge Capacity up to 950A, Packaged in a 4-Pin SOT-227B Tube |
Littelfuse Inc. |
9,485 |
|
|
IXFN120N20
|
quality SOT-227B MOSFETs ROHS |
Littelfuse |
5,350 |
|
|
IXFN48N50Q
|
Discrete Semiconductor Modules rated at 48 Amps, 500V and 0.1 Rds |
Littelfuse |
7,794 |
|
|
IXFN400N15X3
|
IXFN400N15X3: SOT-227B MOSFETs ROHS compliant |
IXYS |
5,646 |
|
|
IXFN170N65X2
|
N-Channel 650 V 170 A 1170 W Chassis Mount X2-Class HiPerFETTM Mosfet - SOT-227B |
IXYS |
9,421 |
|
