|
APT2X61S20J
|
Diode Schottky 200V 75A 4-Pin SOT-227 Tube |
Microchip Technology |
5,952 |
|
|
APT20M11JLL
|
Module APT20M11JLL: Single Transistor Unit with 200V Capacity, ISOTOP Design, Screw Fastening, Max Current Handling of 704A |
Microchip Technology |
8,904 |
|
|
APT20M11JVR
|
Maximum power dissipation of 700W |
Microchip Technology |
6,396 |
|
|
APT20M22JVR
|
Product description: MOSFET with 200V voltage rating and 22mOhm resistance in SOT-227 package |
Microchip Technology |
9,948 |
|
|
APT41F100J
|
FREDFET MOS8 1000 V 41 A SOT-227 Discrete Semiconductor Modules |
Microchip Technology |
7,482 |
|
|
APT80SM120J
|
APT80SM120J MOSFET, employing Silicon Carbide, excels in power management tasks |
Microsemi Corporation |
6,912 |
|
|
APT50MC120JCU2
|
High-performance power module for boost chopper systems |
Microchip Technology |
6,817 |
|
|
APT40SM120J
|
4-Pin SOT-227 Silicon Carbide Power MOSFET 32A 1200V |
Microsemi Corporation |
9,082 |
|
|
G3R20MT17N
|
N-type silicon carbide metal-oxide-semiconductor field-effect transistor with a current rating of 100A in SOT227 housing |
GeneSiC Semiconductor |
5,561 |
|
|
VS-FB180SA10P
|
SOT-227 Packaged N-Channel MOSFET Suitable for High-Power Switching, Rated at 100V Voltage and 180A Continuous Current, Equipped with Four Pins |
Vishay General Semiconductor - Diodes Division |
9,688 |
|
|
IXTN46N50L
|
Features: 500V N-Channel MOSFET, SOT227B Package, Designed for High-Current Applications |
IXYS |
7,484 |
|
|
IXTN600N04T2
|
Advanced HiperFET PWR MOSFET module |
IXYS |
7,790 |
|
|
IXUN350N10
|
Discrete Semiconductor Modules - IXUN350N10: Capable of Handling 350 Amps with a 10V Rating |
IXYS |
9,217 |
|
|
IXTN62N50L
|
Power Field-Effect Transistor IXTN62N50L |
IXYS |
7,572 |
|
|
IXTN36N50
|
6N50 Discrete Semiconductor Modules 36 Amps 500V": |
IXYS |
5,279 |
|
|
IXFN55N50F
|
500V IXFN55N50F |
IXYS |
7,931 |
|
|
IXFN70N60Q2
|
Description of IXFN70N60Q2 product: SOT-227B MOSFETs with RoHS certification |
IXYS |
9,198 |
|
|
IXFN80N50Q2
|
Discrete semiconductor module rated for 80 Amps and 500V with 0.06 Rds |
IXYS |
5,893 |
|
|
HFA120FA60
|
Product Name: HFA120FA60 Rectifiers - 600V, 60A, HEXFRED Technology, SOT-227 Package |
Vishay General Semiconductor - Diodes Division |
7,085 |
|
|
FB180SA10
|
Power MOSFET Module with 100V Voltage Rating |
Vishay General Semiconductor - Diodes Division |
7,284 |
|
|
FA38SA50LC
|
Single N-Channel HEXFET Power MOSFET with 500V Rating |
Vishay General Semiconductor - Diodes Division |
6,337 |
|
|
DSEP2X31-06A
|
SOT-227-4 Diode Array featuring 2 Independent circuits, designed for chassis mounting with a high rating of 600V and 30A |
IXYS |
6,938 |
|
|
DSEP2X25-12C
|
200 Vrrm 2 X 25 A 4.7 Vf Epitaxial Diode - SOT-227 B |
IXYS |
5,171 |
|
|
DSS2X81-0045B
|
Product Description: Schottky Diodes & Rectifiers with a rating of 160 Amps and a voltage rating of 45V |
IXYS |
8,610 |
|
|
APT8030JVFR
|
APT8030JVFR - SOT-227 Discrete Semiconductor Module with FREDFET MOSFET 800V and 30 Ohm |
Microchip Technology |
7,709 |
|
|
APT2X61DC120J
|
Power Module with SiC Rectifiers |
Microchip Technology |
7,443 |
|
|
APT10025JVR
|
APT10025JVR is a N-channel MOSFET transistor designed for high voltage applications |
Microchip |
5,778 |
|
|
APT10021JLL
|
MOSFET designed for rail or tube mounting |
Microchip Technology |
5,433 |
|
|
APT30DF60HJ
|
APT30DF60HJ: Bridge Rectifiers with PM-DIODE-FRED-D-SOT227 |
Microchip Technology |
7,224 |
|
|
APT10025JVFR
|
High-power FREDFET component |
Microchip Technology |
8,486 |
|
|
APT60DF60HJ
|
SOT-227 Tube Diode Rectifier Bridge rated at 600V and 90A |
Microchip Technology |
5,744 |
|
|
APT40DR160HJ
|
1.6KV 40A Single Diode Rectifier Bridge in 4-Pin SOT-227 Tube |
Microchip Technology |
6,808 |
|
|
APT53F80J
|
N-channel 800V 57A Power MOSFET in SOT-227 Package |
Microchip Technology |
7,447 |
|
|
APT60M60JLL
|
SOT-227 packaged N-channel 600V 70A MOSFET |
Microchip Technology |
5,284 |
|
|
APT5012JN
|
APT5012JN by Microchip Technology - Description |
Microsemi Corporation |
5,846 |
|
|
APT40N60JCU2
|
High-performance APT40N60JCU2 ensures efficient energy conversion with reduced losses |
Microchip Technology |
7,694 |
|
|
VS-GA200SA60SP
|
High-performance IGBT module optimized for N-channel operation at 600V, 342A, and a power dissipation of 781000mW |
Vishay General Semiconductor - Diodes Division |
9,615 |
|
|
VS-GT175DA120U
|
Module Trans IGBT N-CH 1200V 288A 1087000mW |
Vishay General Semiconductor - Diodes Division |
7,883 |
|
|
IXGN400N60A3
|
600V N-Channel IGBT Transistor Module |
IXYS |
9,013 |
|
|
IXA70R1200NA
|
High Gain Bipolar MOS Transistor Integrated in High Voltage IGBT Module |
IXYS |
8,202 |
|
|
IXYN82N120C3H1
|
1200V N-Channel Trans IGBT Module 105A 500000mW IXYN82N120C3H1 |
IXYS |
5,395 |
|
|
IXXN100N60B3H1
|
IGBT Transistors XPT 600V with Diode |
IXYS |
9,577 |
|
|
IXSN80N60AU1
|
Reach us for further information |
IXYS |
9,348 |
|
|
GA200SA60SP
|
GA200SA60SP: Transistor IGBT Module, N-Channel, 600V, 342A, 781,000mW |
vishay |
8,452 |
|
|
APT60GF120JRD
|
Low Frequency Combi IGBT NPT Transistors, 1200 Volts at 60 Amps with SOT-227 Package |
Microchip Technology |
8,346 |
|
|
VS-UFB200FA40P
|
Rectifier diode switching 202A |
Vishay General Semiconductor - Diodes Division |
8,788 |
|
|
GA100NA60U
|
GA100NA60U: IGBT Transistors Engineered for High-Side Chopper Operations at Ultrafast Frequencies (8-60kHz) |
vishay |
8,697 |
|
|
IXYN100N65C3H1
|
This product, IXYN100N65C3H1, is an IGBT module comprising a solitary transistor designed to handle up to 650 volts and 90 amperes of current |
IXYS |
6,867 |
|
|
IXSN62N60U1
|
90A Trans IGBT Module - N-Channel, 600V, 250,000mW Power Dissipation |
IXYS |
5,522 |
|
|
APT100MC120JCU2
|
1.2KV 143A N-Channel Silicon Carbide Power MOSFET in SOT-227 Package |
Microchip Technology |
6,440 |
|
