在庫:7,131
Stmicroelectronics
N-Channel 600V 70A
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在庫:7,131
N-Channel 600V 70A
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IGBTs 660W 125A 3.6kV TO-247P ROHS
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600V rated voltage
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Ixys Integrated Circuits Division
IXXK300N60B3 - XPT 600V IGBT 300A Transistors: These transistors feature a voltage rating of 600V and a current rating of 300A
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IXXK300N60B3 - XPT 600V IGBT 300A Transistors: These transistors feature a voltage rating of 600V and a current rating of 300A
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Infineon Insulated Gate Bipolar Transistor
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Infineon Technologies
High-speed switching for high-efficiency power conversion
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High-speed switching for high-efficiency power conversion
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Power transistor IRG4PC50WPBF
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51A Collector Current
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N-Ch 900V 51A TO247AC Transistor
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Infineon Technologies
HEXFRED TO-247 package containing an N-channel IGBT rated for 30A current and 1200V voltage, accompanied by a diode
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HEXFRED TO-247 package containing an N-channel IGBT rated for 30A current and 1200V voltage, accompanied by a diode
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Infineon
40A current handling capacity and 220W power dissipation capability
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40A current handling capacity and 220W power dissipation capability
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Infineon Technologies
Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC
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Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC
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IXYS
Semiconductor device IGBT Chip for power applications with a maximum power dissipation of 300W
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Semiconductor device IGBT Chip for power applications with a maximum power dissipation of 300W
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Disc Igbt Bimosfet-High Voltage in To-247Ad/Tube Littelfuse IXBX75N170
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Trans IGBT Chip N-CH 1500V 10A 62.5W 3-Pin(3+Tab) TO-3PF Tube
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onsemi
70A I(C), 600V V(BR)CES Insulated Gate Bipolar Transistor, N-Channel, TO-247
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70A I(C), 600V V(BR)CES Insulated Gate Bipolar Transistor, N-Channel, TO-247
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Littelfuse Inc.
NGD8201ANT4G is a high-performance Trans IGBT Chip featuring N-channel design
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NGD8201ANT4G is a high-performance Trans IGBT Chip featuring N-channel design
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Onsemi
Transistor IGBT chip with N-channel, 600V rating, 100A current, and 223W power in TO-247 package
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Transistor IGBT chip with N-channel, 600V rating, 100A current, and 223W power in TO-247 package
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Infineon
Integrated Circuit - N-channel IGBT Component with 1200V Voltage Rating, Capable of Carrying 6
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Integrated Circuit - N-channel IGBT Component with 1200V Voltage Rating, Capable of Carrying 6
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TO-220 package type with 3 pins and tab
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IGBT 1200V 30A 198W TO247-3
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Infineon
Infineon SGW30N60 is an IGBT Transistor boasting a 41A current rating and 600V voltage handling capability, housed in a 3-Pin TO-247 package
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Infineon SGW30N60 is an IGBT Transistor boasting a 41A current rating and 600V voltage handling capability, housed in a 3-Pin TO-247 package
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Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
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Onsemi
600V V(BR)CES TO-247 N-Channel Insulated Gate Bipolar Transistor rated for 40A Collector Current
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600V V(BR)CES TO-247 N-Channel Insulated Gate Bipolar Transistor rated for 40A Collector Current
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1200V voltage rating
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Onsemi
N-Channel Transistor IGBT Chip, 1200 Volts, 80 Amperes, TO-247 Package
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N-Channel Transistor IGBT Chip, 1200 Volts, 80 Amperes, TO-247 Package
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Onsemi
ROHS-compliant TO-247AC-3 IGBTs with 298W 43A 1.2kV NPT (Non-Punch Through)
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ROHS-compliant TO-247AC-3 IGBTs with 298W 43A 1.2kV NPT (Non-Punch Through)
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Onsemi
60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package
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60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package
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200V N-channel transistor
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3-Pin TO-247 N-Type Insulated Gate Bipolar Transistor Chip
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Ixys
Advanced N-channel insulated gate bipolar transistor with high current handlin
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Advanced N-channel insulated gate bipolar transistor with high current handlin
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Infineon
This N-channel IGBT chip is capable of handling high currents up to 40A with ease
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This N-channel IGBT chip is capable of handling high currents up to 40A with ease
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Infineon Technologies
IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics
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IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics
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Transistors designed for high power applications
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IGBT 600V 48A 150W TO247AD
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SKP06N60 - Insulated Gate Bipolar Transistor
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SC package IGBT transistors designed for high reliability
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Infineon Technologies
N-Channel Insulated Gate Bipolar Transistor, 30A Collector Current, 1000V Breakdown Voltage, TO-247AD Package, Green Plastic Housing, 3 Pins
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N-Channel Insulated Gate Bipolar Transistor, 30A Collector Current, 1000V Breakdown Voltage, TO-247AD Package, Green Plastic Housing, 3 Pins
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650-Volt N-Channel Transistor IGBT Chip
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Infineon Technologies
IGBT Transistors with Reverse Conducting Capabilities, 1200V 20A
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IGBT Transistors with Reverse Conducting Capabilities, 1200V 20A
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Infineon Technologies
Green Plastic N-Channel IGBT with 60A Collector Current, 1200V Breakdown Voltage, TO-247AD Package
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Green Plastic N-Channel IGBT with 60A Collector Current, 1200V Breakdown Voltage, TO-247AD Package
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Rohm Semiconductor
TO-247N-packaged IGBT transistors featuring FieldStop trench design, with a voltage rating of 650V and a maximum current capacity of 50A
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TO-247N-packaged IGBT transistors featuring FieldStop trench design, with a voltage rating of 650V and a maximum current capacity of 50A
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IGBT Transistors IGBT
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1200V 3A Transistors for High Power Applications
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600V 229A N-Channel IGBT Chip for Transistor TO-264
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Transistor IGBT Chip
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Three-pin TO-247 package with tab
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Microchip
IGBT chip for power transmission, N-channel, 600 volts, 100 amperes, TO-247 package
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IGBT chip for power transmission, N-channel, 600 volts, 100 amperes, TO-247 package
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Advanced IGBT Technology
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Onsemi
Introducing FGA40N65SMD: Trans IGBT Chip N-CH 650V 80A 349mW 3-Pin(3+Tab) TO-3P Tube
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Introducing FGA40N65SMD: Trans IGBT Chip N-CH 650V 80A 349mW 3-Pin(3+Tab) TO-3P Tube