|
STW38N65M5
|
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-247 Tube |
ST |
5,735 |
|
|
HGTG20N60B3D
|
General Purpose IGBT Single Transistor |
Onsemi |
6,372 |
|
|
STGW60H65F
|
IGBT Transistors 60A 650V FST IGBT Very High Switching |
ST |
5,948 |
|
|
SCH2080KEC
|
N-Channel Metal-oxide Semiconductor FET |
Rohm Semiconductor |
8,454 |
|
|
STW120NF10
|
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247 Tube |
ST |
6,282 |
|
|
STW3N150
|
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 Tube |
ST |
8,327 |
|
|
IXBH5N160G
|
Trans IGBT Chip |
IXYS |
9,136 |
|
|
IXFH160N15T2
|
Product description: 150V 160A N Channel TO-247 MOSFET with 9mΩ at 10V and 80A, 880W and 4.5V at 1mA, ROHS compliant |
IXYS |
8,448 |
|
|
DPG60C200HB
|
Rectifier Diode Switching 200V 30A 35ns 3-Pin(3+Tab) TO-247 Tube |
IXYS |
7,820 |
|
|
FDH45N50F
|
Power MOSFET for amplification |
onsemi |
5,182 |
|
|
MJW21195
|
Robust PNP device handling and A current |
Onsemi |
9,287 |
|
|
IMW120R045M1XKSA1
|
N-channel MOSFET transistor capable of handling up to 1.2 kilovolts and 52 amperes in a TO-247 package |
Infineon Technologies |
5,008 |
|
|
TIP36CW
|
TIP36CW: High-Power BJT |
ST |
4,570 |
|
|
FDH210N08
|
MOSFET 75V, 210A NCH MOSFET |
onsemi |
6,926 |
|
|
IXTH130N20T
|
effect transistor, power transistor, IXTH130N20T, product description |
IXYS |
7,358 |
|
|
BU508AW
|
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-247 Tube |
ST |
3,718 |
|
|
IHW30N90T
|
The IHW30N90T is an IGBT transistor duo pack engineered for minimal power loss, boasting a high voltage tolerance of 900V and a current rating of 30A |
Infineon Technologies |
7,867 |
|
|
IXTH120P065T
|
65V 120A P-Channel Power MOSFET |
IXYS |
4,471 |
|
|
IKW40N120T2FKSA1
|
IKW40N120T2FKSA1: TO-247-3 IGBTs meeting ROHS standards |
INFINEON |
3,805 |
|
|
SUG80050E-GE3
|
VISHAY - SUG80050E-GE3 - MOSFET, N-CH, 150V, 100A, TO-247 |
Vishay Siliconix |
5,578 |
|
|
IMW120R060M1HXKSA1
|
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET |
Infineon Technologies |
6,335 |
|
|
IXSH30N60C
|
Transistor IGBT Chip designed with N-type channel, suitable for 600V and 55A operations, housed in TO-247AD package |
Ixys |
7,574 |
|
|
STW13NK100Z
|
Trans MOSFET N-CH 1KV 13A 3-Pin(3+Tab) TO-247 Tube |
ST |
5,511 |
|
|
IKW50N65F5FKSA1
|
CH 650V 80A 305W 3-Pin ~24J5000W30420AJHGIBT |
Infineon Technologies |
7,285 |
|
|
STW43NM60ND
|
The STW43NM60ND MOSFET features a low on-resistance of 88 mΩ and a high voltage rating of 600 V in a TO-247 package |
Stmicroelectronics |
8,215 |
|
|
STW75N60DM6
|
Advanced MOSFET technology enables high current flow and low losse |
ST |
7,486 |
|
|
HGTG40N60A4
|
3-Pin TO-247 N-Type Insulated Gate Bipolar Transistor Chip |
Onsemi |
6,330 |
|
|
IXTH6N100D2
|
High voltage MOSFET with a current capacity of 6A |
IXYS |
5,556 |
|
|
IXTH6N150
|
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
IXYS |
9,153 |
|
|
STW12NK95Z
|
TO-247 Package SuperMESH Power MOSFET with N-Channel |
Stmicroelectronics |
5,404 |
|
|
DSSK80-006B
|
THROUGH-HOLE SCHOTTKY DIODE 40A 60V TO247AD |
Ixys |
8,331 |
|
|
IXFH15N100Q
|
IXFH15N100Q MOSFET |
IXYS |
6,738 |
|
|
HGTG11N120CN
|
1200V voltage rating |
Onsemi |
6,681 |
|
|
IXTH40N30
|
MOSFETs ROHS TO-247 IXTH40N30 |
Littelfuse |
8,766 |
|
|
APT70SM70B
|
Silicon Carbide N-Channel Power MOSFET, 700 Volts, 58 Amperes, TO-247 Enclosure |
Microsemi Corporation |
6,518 |
|
|
STW30N80K5
|
Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247 Tube |
ST |
5,631 |
|
|
IKW25N120H3
|
TO-247 Tube package with 3 pins and a tab for easy mounting and connection |
Infineon |
7,146 |
|
|
IMW65R027M1HXKSA1
|
MOSFET utilizing Silicon Carbide |
Infineon Technologies |
7,352 |
|
|
STPSC40H12CWL
|
Rectifier Diode Schottky SiC 1.2KV 76A 3-Pin(3+Tab) TO-247 Tube |
STMicroelectronics |
8,526 |
|
|
IXFH120N15P
|
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD |
IXYS |
4,357 |
|
|
STGW39NC60VD
|
STMICROELECTRONICS - STGW39NC60VD - IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins |
STMicroelectronics |
8,599 |
|
|
APT8075BN
|
The APT8075BN model is created by Microchip Technology |
Microchip |
7,707 |
|
|
UJ3N120035K3S
|
Silicon carbide JFET with a voltage rating of 1200V and on-resistance of 35mOhms |
Qorvo |
8,402 |
|
|
STW15N80K5
|
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
ST |
8,428 |
|
|
IXFR44N50Q
|
500V rated voltage N Channel MOSFET with a maximum current of 34A |
IXYS |
5,450 |
|
|
STW40N65M2
|
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
ST |
3,794 |
|
|
IXFH24N80P
|
TO-247AD Plastic Packaged Power FET featuring 24A Drain Current, 800V Voltage Rating, N-Channel Design, and 0.4ohm On-Resistance |
Littelfuse |
5,894 |
|
|
IXFR140N30P
|
MOSFET IXFR140N30P in N-type configuration, packaged in ISOPLUS247 |
IXYS |
7,564 |
|
|
IXFH120N20P
|
20A N-channel power MOSFET designed for high efficiency applications |
IXYS |
5,451 |
|
|
HUF75639G3
|
MOSFET 56a 100V N-Ch UltraFET .25 Ohm |
onsemi |
9,325 |
|
