|
IXTH110N25T
|
Through Hole technology for reliable TO-247-3 package mounting |
IXYS |
6,041 |
|
|
IXFH52N30Q
|
ROHS-approved TO-247AD MOSFETs |
IXYS |
4,203 |
|
|
IXFH15N100Q3
|
IXYS IXFH15N100Q3 N-channel MOSFET Transistor |
IXYS |
5,299 |
|
|
IXFH13N80
|
13A Power MOSFET, 800V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor, TO-247 Package, 3 Pins |
IXYS |
8,072 |
|
|
IXFH36N50P
|
MOSFETs TO-247AD ROHS |
Littelfuse |
8,166 |
|
|
IXFH16N120P
|
Power Field-Effect Transistor 16A 1200V |
IXYS |
5,928 |
|
|
IXTH6N50D2
|
500V N-channel MOSFET in TO-247 package configuration |
IXYS |
4,689 |
|
|
IXTH4N150
|
MOSFET High Voltage Power MOSFET |
IXYS |
6,404 |
|
|
IXTH10N100D2
|
TO-247 MOSFETs meeting ROHS standards |
IXYS |
7,523 |
|
|
IXTH6N120
|
Unipolar N-MOSFET transistor, rated at 1 |
IXYS |
8,485 |
|
|
IXTH96N25T
|
TO-247 MOSFETs ROHS: Description of Product IXTH96N25T |
Littelfuse |
5,452 |
|
|
IXTH200N10T
|
one-directional transistor |
IXYS |
5,527 |
|
|
IXTH110N10L2
|
IXTH110N10L2: MOSFET designed for linear power applications |
IXYS |
5,658 |
|
|
IXTH76P10T
|
Discrete MOSFET with a 76A current rating and 100V voltage rating in P-channel configuration, designed for through-hole mounting in TO-247AD package |
IXYS |
7,043 |
|
|
IXTH30N50L2
|
IXYS IXTH30N50L2 - N-channel MOSFET with 500V voltage rating and 30A current capability in TO-247AD package |
IXYS |
8,049 |
|
|
IXTH140P10T
|
P-Channel TO-247HV Trenchp MOSFET Discrete 140A 100V |
IXYS |
5,455 |
|
|
IXFR48N50Q
|
This MOSFET transistor, part number IXFR48N50Q, has a voltage rating of 500V and can handle currents up to 40A |
IXYS |
7,181 |
|
|
IXFR80N50P
|
HIPERFET THT MOSFET capable of dissipating 45A current at 500V voltage in an ISOPLUS247 package |
IXYS |
7,992 |
|
|
IXFR64N60P
|
ROHS-approved MOSFET components |
IXYS |
7,239 |
|
|
IXKH70N60C5
|
Channel MOSFET with Enhancement Mode |
Littelfuse |
6,099 |
|
|
IXFR120N20
|
ISOPLUS247, 3 PIN |
IXYS |
8,311 |
|
|
FCH47N60F
|
Power MOSFET for High Voltage Applications |
Onsemi |
5,716 |
|
|
FQH8N100C
|
Transistor type: N-MOSFET |
onsemi |
7,125 |
|
|
FCH35N60
|
N-Channel SUPERFET Power MOSFET FCH35N60: 600V, 35A, 98mΩ, TO-247 Package with Easy Drive |
Onsemi |
7,465 |
|
|
DSA70C100HB
|
Diode Schottky with 100V and 35A rating in TO-247 package |
Ixys |
9,071 |
|
|
BUX98APW
|
24A NPN silicon power transistor |
Onsemi |
7,378 |
|
|
APT15DQ60BG
|
Diode Switching 600V 15A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
7,204 |
|
|
APT30D100BHBG
|
1KV 30A 290ns 3-Pin(3+Tab) TO-247 Tube Rectifier Diode Switching |
Microchip Technology |
9,993 |
|
|
ARF449AG
|
Trans RF FET N-CH 450V 9A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
9,558 |
|
|
APT60N60BCSG
|
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
5,332 |
|
|
APT7M120B
|
APT7M120B is a high-power, high-efficiency semiconductor device suitable for a variety of electronic applications |
Microchip Technology |
8,592 |
|
|
APT38N60BC6
|
APT38N60BC6 is a high-voltage N-channel MOSFET with a unipolar structure, designed to handle up to 600V and 24A of current |
Microchip Technology |
7,274 |
|
|
APT5025BN
|
Explore the exceptional capabilities of APT5025BN, a flagship offering from Microchip Technology |
Microchip |
5,646 |
|
|
NGTB20N120LWG
|
Trans IGBT Chip N-CH 1200V 40A 192W 3-Pin(3+Tab) TO-247 Tube |
onsemi |
8,049 |
|
|
IRGP20B60PDPBF
|
40A current handling capacity and 220W power dissipation capability |
Infineon |
7,377 |
|
|
IRG4PC50WPBF
|
Power transistor IRG4PC50WPBF |
Infineon Technologies |
5,370 |
|
|
IXGH48N60B3D1
|
48 Amperes, 300 Watts, TO247AD package, 600 Volts |
IXYS |
5,090 |
|
|
IXGH35N120B
|
70 Amps IGBT Transistors rated at 1200V with 3.3 Rds |
IXYS |
5,138 |
|
|
IXGH30N60C2
|
30 Amps IGBT Transistors with 600V 2.7 V Rds |
IXYS |
7,027 |
|
|
IXBH9N160G
|
TO-247-3 IGBTs meeting ROHS standards |
IXYS |
9,776 |
|
|
IXBH42N170A
|
The IXBH42N170A product is a cutting-edge N-channel Trans IGBT Chip engineered to operate at 1700V and handle currents of up to 42A |
IXYS |
8,736 |
|
|
IXBH42N170
|
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A |
IXYS |
9,871 |
|
|
IRGPH40F
|
High durability IGBT chip component |
Infineon |
7,709 |
|
|
IRGPC50F
|
With its TO-247AC housing, this IGBT chip offers a rugged and reliable solution for power electronics designs |
Infineon |
6,674 |
|
|
IRGPC40S
|
High durability IGBT chip |
Infineon |
9,918 |
|
|
IRGP50B60PD1PBF
|
CH 600V 75A 390W 3-Pin(3+Tab) TO-247AC Tube |
Infineon |
7,780 |
|
|
IRGP35B60PDPBF
|
Tube packaging of Transistor IGBT Chip with N-Channel, 600V 60A 308W |
Infineon |
5,263 |
|
|
IRG4PH40K
|
Transistor IGBT Chip N-Channel 1200V 30A 160W TO-247AC Tube |
Infineon Technologies |
8,962 |
|
|
IRG4PH30KD
|
Insulated Gate Bipolar Transistor, IRG4PH30KD |
Infineon Technologies |
5,447 |
|
|
IRG4PC30S
|
Three-Pin TO-247AC Trans IGBT Chip |
Infineon Technologies |
9,505 |
|
