在庫：6,626
Stmicroelectronics
Long-Leaded TO-247 Trench Gate Field-Stop IGBT Supplied in Tube
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![STGWA40H120DF2]()
STGWA40H120DF2在庫：6,626
Long-Leaded TO-247 Trench Gate Field-Stop IGBT Supplied in Tube
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![STGP10NB60SD]()
在庫：7,569
Trans IGBT Chip N-CH 600V 29A 80W 3-Pin(3+Tab) TO-220AB Tube
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![STGW75M65DF2]()
在庫：8,296
Trans IGBT Chip N-CH 650V 120A 468W 3-Pin(3+Tab) TO-247 Tube
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![STGWT28IH125DF]()
STGWT28IH125DF在庫：6,769
ST
Three-pin TO-3P package allows for easy integration into various electronic systems
在庫：6,769
Three-pin TO-3P package allows for easy integration into various electronic systems
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![STGW30H65FB]()
在庫：5,374
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-247 Tube
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![STGP19NC60SD]()
在庫：6,440
Trans IGBT Chip N-CH 600V 40A 125W 3-Pin(3+Tab) TO-220AB Tube
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![STGW40M120DF3]()
在庫：5,074
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
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![STGW38IH130D]()
在庫：3,879
Trans IGBT Chip N-CH 1300V 63A 250W 3-Pin(3+Tab) TO-247 Tube
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![STGW60H65F]()
在庫：5,948
IGBT Transistors 60A 650V FST IGBT Very High Switching
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![STGWT40V60DLF]()
STGWT40V60DLF在庫：8,399
ST
High-reliability, high-power semiconductor device with built-in freewheeling diode for efficient power switching
在庫：8,399
High-reliability, high-power semiconductor device with built-in freewheeling diode for efficient power switching
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![GT40T301]()
GT40T301在庫：6,089
TOSHIBA
GT40T301: IGBT Transistors in TO-3P(LH) Package, featuring Through Hole Mounting, capable of handling 1500 Volts at 40 Amperes
在庫：6,089
GT40T301: IGBT Transistors in TO-3P(LH) Package, featuring Through Hole Mounting, capable of handling 1500 Volts at 40 Amperes
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![STGP15H60DF]()
在庫：8,254
Trans IGBT Chip N-CH 600V 30A 115W 3-Pin(3+Tab) TO-220AB Tube
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![STGW28IH125DF]()
在庫：6,479
Trans IGBT Chip N-CH 1250V 60A 375W 3-Pin(3+Tab) TO-247 Tube
-
![IRG4BC30KD-SPBF]()
IRG4BC30KD-SPBF在庫：9,192
Infineon Technologies
Trans IGBT Chip N-CH 600V 28A 100W 3-Pin(2+Tab) D2PAK Tube
在庫：9,192
Trans IGBT Chip N-CH 600V 28A 100W 3-Pin(2+Tab) D2PAK Tube
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![IKZ75N65EH5XKSA1]()
在庫：9,658
High Power Semiconductor Device
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![IKQ75N120CS6XKSA1]()
IKQ75N120CS6XKSA1在庫：8,534
Infineon Technologies
Transistor IGBT Chip suitable for high power applications
在庫：8,534
Transistor IGBT Chip suitable for high power applications
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![SGP06N60]()
SGP06N60在庫：9,951
Infineon
Insulated Gate Bipolar Transistor (IGBT) capable of handling 12A of collector current and with a breakdown voltage of 600V (V(BR)CES)
在庫：9,951
Insulated Gate Bipolar Transistor (IGBT) capable of handling 12A of collector current and with a breakdown voltage of 600V (V(BR)CES)
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![SGP10N60]()
在庫：8,334
High-power N-channel power transistor for industrial applications.
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![SKP10N60A]()
SKP10N60A在庫：5,365
Infineon
Described as an Insulated Gate Bipolar Transistor, the SKP10N60A boasts a 20A current capacity and a 600V breakdown voltage
在庫：5,365
Described as an Insulated Gate Bipolar Transistor, the SKP10N60A boasts a 20A current capacity and a 600V breakdown voltage
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![FGL40N120ANTU]()
在庫：7,762
NPT IGBTs with 1200V Maximum Voltage
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![IXYP10N65C3D1]()
在庫：7,196
High Performance 650V IGBT Chip
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![IKW40N65F5FKSA1]()
在庫：5,791
Trans IGBT Chip N-CH 650V 74A 255W 3-Pin(3+Tab) TO-247 Tube
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![IGW30N65L5XKSA1]()
IGW30N65L5XKSA1在庫：6,026
Infineon Technologies
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 650 Volts, 85 Amps, TO-247 Package
在庫：6,026
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 650 Volts, 85 Amps, TO-247 Package
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![IKW30N60DTPXKSA1]()
IKW30N60DTPXKSA1在庫：9,210
Infineon Technologies
N-channel IGBT chip designed for high-power applications, with a voltage rating of 600V and current handling capacity of 53A, packaged in TO-247
在庫：9,210
N-channel IGBT chip designed for high-power applications, with a voltage rating of 600V and current handling capacity of 53A, packaged in TO-247
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![SKB06N60]()
在庫：7,348
High-power switching device for efficient motor control application
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![IKW50N65EH5XKSA1]()
IKW50N65EH5XKSA1在庫：8,128
Infineon Technologies
Trans IGBT Chip N-CH 650V 80A 275W 3-Pin TO-247 Tube
在庫：8,128
Trans IGBT Chip N-CH 650V 80A 275W 3-Pin TO-247 Tube
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![IXDR30N120]()
在庫：5,014
IXDR Series 1200 Vce 50 A 100 ns t(on) High Voltage IGBT - ISOPLUS 247
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![IXGX120N60B]()
IXGX120N60B在庫：5,467
Littelfuse
Transistors equipped with Insulated Gate Bipolar Technology, offering 76 Amps and 600V with a 2.1 Rds specification
在庫：5,467
Transistors equipped with Insulated Gate Bipolar Technology, offering 76 Amps and 600V with a 2.1 Rds specification
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![AUIRGP4062D-E]()
在庫：6,205
AUIRGP4062D-E, an Automotive IGBT Discrete
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![FGH40N65UFDTU]()
在庫：6,391
Field Stop IGBT 650V 80A 1.8V TO247
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![FGH80N60FDTU]()
FGH80N60FDTU在庫：5,536
Onsemi
Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation
在庫：5,536
Product FGH80N60FDTU: N-channel 600V 80A Trans IGBT Chip, TO-247 Package, 290W Power Dissipation
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![GT20J341]()
在庫：9,360
GT20J341: High-performance IGBT Transistors
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![GT30J121]()
GT30J121在庫：5,688
Toshiba
GT30J121 is an N-channel IGBT with a 600V rating and a 30A enhancement capability, packaged in TO3PN
在庫：5,688
GT30J121 is an N-channel IGBT with a 600V rating and a 30A enhancement capability, packaged in TO3PN
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![GT40RR21]()
在庫：9,571
Advanced power electronics component for efficient energy transfer
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![HGT1S20N60C3S9A]()
HGT1S20N60C3S9A在庫：6,477
Onsemi
The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
在庫：6,477
The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
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![HGTG10N120BND]()
HGTG10N120BND在庫：8,479
Onsemi
N-Channel Insulated Gate Bipolar Transistor (IGBT) encased in a TO-247 package, designed to handle currents of 35A and voltages up to 1200V
在庫：8,479
N-Channel Insulated Gate Bipolar Transistor (IGBT) encased in a TO-247 package, designed to handle currents of 35A and voltages up to 1200V
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![HGTG12N60A4D]()
在庫：5,035
Low power dissipation
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![HGTG20N60A4]()
在庫：7,501
Insulated Gate Bipolar Transistor, 600V, SMPS
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![HGTG7N60A4D]()
在庫：5,686
IGBT Transistors 600V N-Ch IGBT SMPS Series HF
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![HGTP7N60A4]()
在庫：5,609
Trans IGBT Chip N-CH 600V 34A 125W 3-Pin(3+Tab) TO-220 Tube
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![IGD06N60T]()
在庫：6,558
ROHS Compliant TO-252-3 IGBTs
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![IHW30N160R2FKSA1]()
在庫：5,829
RC-IGBT technology
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![IKD10N60R]()
在庫：5,633
TO-252-3 IGBTs with ROHS certification: IKD10N60R
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![SKB02N120]()
在庫：5,786
Fast, efficient, and highly stable power electronics compone
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![STGW30NC60W]()
在庫：7,995
Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube
-
![STGW50H60DF]()
在庫：8,735
Advanced power electronics component for motor contro
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![IKP40N65F5]()
IKP40N65F5在庫：6,813
Infineon
Trans IGBT Chip N-CH 650V 74A 255mW Automotive 3-Pin(3+Tab) TO-220 Tube
在庫：6,813
Trans IGBT Chip N-CH 650V 74A 255mW Automotive 3-Pin(3+Tab) TO-220 Tube
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![NGTB10N60R2DT4G]()
在庫：5,895
Trans IGBT Chip N-CH 600V 20A 72W 3-Pin(2+Tab) DPAK T/R
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![NGTB25N120LWG]()
在庫：9,438
Trans IGBT Chip
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![NGTB40N120L3WG]()
NGTB40N120L3WG在庫：7,710
Onsemi
NGTB40N120L3WG is a high-performance Motor Driver IGBT designed for demanding industrial applications
在庫：7,710
NGTB40N120L3WG is a high-performance Motor Driver IGBT designed for demanding industrial applications
