在庫：5,986
Onsemi
FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage
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![FGH75N60UFTU]()
FGH75N60UFTU在庫：5,986
FS Planar IGBT Transistors, N-Type, capable of handling 75A current at 600V voltage
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![IXGR40N60CD1]()
IXGR40N60CD1在庫：5,092
IXYS
75 Amps IGBT Transistors capable of handling 600V with a low 2.5 Rds on-state voltage
在庫：5,092
75 Amps IGBT Transistors capable of handling 600V with a low 2.5 Rds on-state voltage
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![IXGR50N60BD1]()
在庫：6,674
00V Voltage Rating
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![IXER35N120D1]()
IXER35N120D1在庫：8,812
Ixys
The IXER35N120D1 is a sophisticated Trans IGBT Chip offering N-Channel functionality
在庫：8,812
The IXER35N120D1 is a sophisticated Trans IGBT Chip offering N-Channel functionality
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![HGTD1N120BNS9A]()
在庫：7,884
Trans IGBT Chip N-CH 1200V 5.3A 60W 3-Pin(2+Tab) DPAK T/R
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![IKW40N65H5]()
在庫：6,389
0N65H5 IGBT Transistor 74A 650V 3-Pin TO-247
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![IXGX60N60B2D1]()
在庫：7,585
Three-Pin (Three Plus Tab) Package, 247 Style
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![IXGX75N250]()
IXGX75N250在庫：7,338
IXYS
Single Insulated Gate Bipolar Transistor Discrete 75 Amps 2500 Volts High Voltage Plus247 Through-Hole
在庫：7,338
Single Insulated Gate Bipolar Transistor Discrete 75 Amps 2500 Volts High Voltage Plus247 Through-Hole
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![SGS5N150UFTU]()
SGS5N150UFTU在庫：7,228
onsemi
SGS5N150UFTU is a description of IGBT transistors with the product name SGS10N60RUFD1TU
在庫：7,228
SGS5N150UFTU is a description of IGBT transistors with the product name SGS10N60RUFD1TU
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![IHW30N110R3]()
在庫：8,089
High-Voltage N-Channel Transistor
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![IKW20N60H3]()
IKW20N60H3在庫：7,947
Infineon Technologies
High-power IGBT Transistors rated for 600 Volts and 20 Amperes, providing 170 Watts
在庫：7,947
High-power IGBT Transistors rated for 600 Volts and 20 Amperes, providing 170 Watts
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![FGL60N100BNTDTU]()
在庫：6,543
Insulated Gate Bipolar Transistor
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![FGM623S]()
FGM623S在庫：7,975
Sanken Electric USA Inc.
Transistor Chip for Insulated Gate Bipolar Transistor (IGBT), N-Channel, 600 Volts, 30 Amps, 60 Watts, TO-3PF Configuration
在庫：7,975
Transistor Chip for Insulated Gate Bipolar Transistor (IGBT), N-Channel, 600 Volts, 30 Amps, 60 Watts, TO-3PF Configuration
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![IGP30N60H3]()
IGP30N60H3在庫：6,983
Infineon Technologies
N-channel IGBT chip with a 600V voltage rating, capable of handling 60A current with a power dissipation of 187mW in a TO-220AB package
在庫：6,983
N-channel IGBT chip with a 600V voltage rating, capable of handling 60A current with a power dissipation of 187mW in a TO-220AB package
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![IRG4BC10K]()
IRG4BC10K在庫：7,629
Infineon Technologies
channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V and a current rating of 9A
在庫：7,629
channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V and a current rating of 9A
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![IXBH32N300]()
IXBH32N300在庫：5,841
Ixys Integrated Circuits Division
TO-247AD 3-Pin IGBT Chip for N-Channel Transistor with 3000V 80A 400W
在庫：5,841
TO-247AD 3-Pin IGBT Chip for N-Channel Transistor with 3000V 80A 400W
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![IXBH9N160G]()
在庫：9,776
TO-247-3 IGBTs meeting ROHS standards
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![IXBK55N300]()
在庫：7,323
Single IGBT Discrete Diode, 55A, 3000V, BIMOSFET TO264
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![IXRH40N120]()
在庫：5,360
Robust and dependable contact ideal for heavy-duty uses
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![IXRP15N120]()
在庫：9,273
15 Amps, 1200V IGBT Transistors
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![IXSH35N120A]()
在庫：9,034
1200V 70A IGBT Chip N-CH Transistor
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![STGB30H60DFB]()
STGB30H60DFB在庫：5,406
Stmicroelectronics Nv
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
在庫：5,406
Trench gate field-stop 600 V, 30 A high speed HB series IGBT
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![IRG4BC10SD]()
在庫：5,196
Trans IGBT Chip N-CH 600V 14A 38mW TO-220AB 3-Pin
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![IXBX55N300]()
在庫：7,642
IGBT Transistors Disc
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![IXBX64N250]()
在庫：5,428
Gate Drivers IXBX64N250 64A 2500V
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![NGTB15N120FL2WG]()
在庫：9,466
Trans IGBT Chip N-CH 1200V 30A 294W 3-Pin(3+Tab) TO-247 Tube
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![DGTD120T40S1PT]()
在庫：7,658
IGBT 1200V-X TO247 TUBE 0.45K IGBT Transistors
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![IXBL64N250]()
IXBL64N250在庫：8,309
Ixys Integrated Circuits Division
ISOPLUS I5-PAK Packaged N-Type IGBT Chip Operating at 2500V, Supporting Currents up to 116A, and Handling Power Dissipation of 500000mW
在庫：8,309
ISOPLUS I5-PAK Packaged N-Type IGBT Chip Operating at 2500V, Supporting Currents up to 116A, and Handling Power Dissipation of 500000mW
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![IXGN200N170]()
在庫：9,859
RoHS compliant 1.7kV IGBT
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![IRG4BC20W]()
在庫：6,792
IRG4BC20W: A transistor IGBT chip
-
![IXGA30N60C3C1]()
在庫：8,789
N-Channel 600 Volt 60 Amp 220 Watt
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![SKP02N120]()
在庫：5,286
2A Collector Current
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![IXSH35N140A]()
IXSH35N140A在庫：7,187
Ixys Integrated Circuits Division
IXSH35N140A: N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1400V, 70A, 300mW, TO-247AD Configuration
在庫：7,187
IXSH35N140A: N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1400V, 70A, 300mW, TO-247AD Configuration
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![IXSH40N60A]()
IXSH40N60A在庫：8,941
IXYS
High speed IGBT transistor with a voltage rating of 600V and a current rating of 40A
在庫：8,941
High speed IGBT transistor with a voltage rating of 600V and a current rating of 40A
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![AUIRGPS4067D1]()
AUIRGPS4067D1在庫：6,212
Infineon Technologies
The AUIRGPS4067D1 offers robust N-channel IGBT functionality, providing efficient power switching and control with its 3-Pin (3+Tab) configuration
在庫：6,212
The AUIRGPS4067D1 offers robust N-channel IGBT functionality, providing efficient power switching and control with its 3-Pin (3+Tab) configuration
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![AUIRGP50B60PD1]()
在庫：9,944
High Power N-Channel Transistor
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![IHW20N135R5]()
在庫：5,849
350V and current capability of 40A
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![IXXX160N65B4]()
在庫：8,221
High-power 650V/310A IGBT Transistors
-
![IGW15N120H3]()
IGW15N120H3在庫：5,990
Infineon Technologies
Trans IGBT Chip N-CH 1200V 30A 217W 3-Pin(3+Tab) TO-247 Tube
在庫：5,990
Trans IGBT Chip N-CH 1200V 30A 217W 3-Pin(3+Tab) TO-247 Tube
-
![IRGS4065PBF]()
在庫：6,899
Insulated-Gate Bipolar Transistor
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![IRGR3B60KD2PBF]()
IRGR3B60KD2PBF在庫：7,624
Infineon Technologies
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel
在庫：7,624
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel
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![IHW30N160R2]()
在庫：9,692
600V, 60A current
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![IRGBC30U]()
IRGBC30U在庫：7,322
Infineon Technologies
Transistor IGBT Chip rated for 600V, 23A with 100mW power dissipation in TO-220AB package
在庫：7,322
Transistor IGBT Chip rated for 600V, 23A with 100mW power dissipation in TO-220AB package
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![IRGP4068D-EPBF]()
IRGP4068D-EPBF在庫：9,822
Infineon Technologies
N-channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V
在庫：9,822
N-channel insulated gate bipolar transistor (IGBT) chip with a voltage rating of 600V
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![IRG4IBC10UDPBF]()
IRG4IBC10UDPBF在庫：7,611
Infineon Technologies
Trans IGBT Chip N-CH 600V 6.8A 25W 3-Pin(3+Tab) TO-220AB Full-Pak Tube
在庫：7,611
Trans IGBT Chip N-CH 600V 6.8A 25W 3-Pin(3+Tab) TO-220AB Full-Pak Tube
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![IRGPC50FD2]()
IRGPC50FD2在庫：5,850
Infineon Technologies
Through-hole TO-247AC IGBT capable of handling 600 volts, with a maximum current rating of 70 amps and a power dissipation of 200 watts
在庫：5,850
Through-hole TO-247AC IGBT capable of handling 600 volts, with a maximum current rating of 70 amps and a power dissipation of 200 watts
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![IXXX200N60B3]()
在庫：5,705
High power TO-247-3 IGBTs rated at 1.63kW, 380A, and 600V
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![IXYH30N450HV]()
在庫：5,222
High voltage IGBT with 30A current rating
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![FGH75T65SHDTL4]()
FGH75T65SHDTL4在庫：9,024
Onsemi
Product FGH75T65SHDTL4 features Insulated Gate Bipolar Transistor (IGBT) technology
在庫：9,024
Product FGH75T65SHDTL4 features Insulated Gate Bipolar Transistor (IGBT) technology
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![IXGH20N60B]()
在庫：6,993
40 Amps, 600V IGBT Transistors
