IXFH26N60P
|
N-Channel MOSFET with 26A and 600V ratings in TO-247AD package |
IXYS |
5,335 |
|
IXFH30N50P
|
The IXFH30N50P is a robust power MOSFET with N-channel configuration, delivering a current capacity of 30A and supporting voltages up to 500V |
IXYS |
6,539 |
|
IRFP451
|
14A N-CHANNEL POWER MOSFET |
Harris Corporation |
6,499 |
|
IXFH10N100
|
247AD ROHS MOSFETs |
Littelfuse |
7,892 |
|
IXFH26N50P
|
High-voltage N-channel MOSFET transistor with a current rating of 26A in a TO-247AD package |
IXYS |
5,993 |
|
IXFH52N30P
|
The IXFH52N30P device is a N-channel MOSFET transistor rated for 300V and 52A, enclosed in a TO-247 package |
IXYS |
6,054 |
|
IXFH80N10Q
|
MOSFET with a voltage rating of 100V and a current rating of 80A |
IXYS |
6,683 |
|
IXFH40N30
|
With a TO-247AD package and a maximum voltage rating of 300V, the IXFH40N30 MOSFET is ideal for power management in various electronic systems |
IXYS |
7,036 |
|
IXFH20N60
|
20 amp MOSFET with 600 volt capacity |
IXYS |
8,990 |
|
IXFH50N20
|
IXFH50N20 is a N Channel TO-247AD MOSFET with a voltage rating of 200V and a current rating of 50A |
Littelfuse |
8,570 |
|
IXFH20N60Q
|
TO-247AD Plastic Package-3 |
Littelfuse |
6,339 |
|
IXTH75N10L2
|
Compact and rugged through-hole power device for high-reliability desig |
IXYS |
4,568 |
|
IXFH15N100Q3
|
IXYS IXFH15N100Q3 N-channel MOSFET Transistor |
IXYS |
5,299 |
|
IXFH13N80
|
13A Power MOSFET, 800V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor, TO-247 Package, 3 Pins |
IXYS |
8,072 |
|
IXTH10N100D2
|
TO-247 MOSFETs meeting ROHS standards |
IXYS |
7,523 |
|
IXTH30N50L2
|
IXYS IXTH30N50L2 - N-channel MOSFET with 500V voltage rating and 30A current capability in TO-247AD package |
IXYS |
8,049 |
|
IXFR48N50Q
|
This MOSFET transistor, part number IXFR48N50Q, has a voltage rating of 500V and can handle currents up to 40A |
IXYS |
7,181 |
|
IXFR120N20
|
ISOPLUS247, 3 PIN |
IXYS |
8,311 |
|
BUX98APW
|
24A NPN silicon power transistor |
Onsemi |
7,378 |
|
APT15DQ60BG
|
Diode Switching 600V 15A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
7,204 |
|
APT30D100BHBG
|
1KV 30A 290ns 3-Pin(3+Tab) TO-247 Tube Rectifier Diode Switching |
Microchip Technology |
9,993 |
|
ARF449AG
|
Trans RF FET N-CH 450V 9A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
9,558 |
|
APT60N60BCSG
|
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
5,332 |
|
APT7M120B
|
APT7M120B is a high-power, high-efficiency semiconductor device suitable for a variety of electronic applications |
Microchip Technology |
8,592 |
|
APT38N60BC6
|
APT38N60BC6 is a high-voltage N-channel MOSFET with a unipolar structure, designed to handle up to 600V and 24A of current |
Microchip Technology |
7,274 |
|
APT5025BN
|
Explore the exceptional capabilities of APT5025BN, a flagship offering from Microchip Technology |
Microchip |
5,646 |
|
NGTB20N120LWG
|
Trans IGBT Chip N-CH 1200V 40A 192W 3-Pin(3+Tab) TO-247 Tube |
onsemi |
8,049 |
|
IRGP20B60PDPBF
|
40A current handling capacity and 220W power dissipation capability |
Infineon |
7,377 |
|
IRG4PC50WPBF
|
Power transistor IRG4PC50WPBF |
Infineon Technologies |
5,370 |
|
IXGH48N60B3D1
|
48 Amperes, 300 Watts, TO247AD package, 600 Volts |
IXYS |
5,090 |
|
IXGH30N60C2
|
30 Amps IGBT Transistors with 600V 2.7 V Rds |
IXYS |
7,027 |
|
IXBH42N170A
|
The IXBH42N170A product is a cutting-edge N-channel Trans IGBT Chip engineered to operate at 1700V and handle currents of up to 42A |
IXYS |
8,736 |
|
IRGPH40F
|
High durability IGBT chip component |
Infineon |
7,709 |
|
IRGPC50F
|
With its TO-247AC housing, this IGBT chip offers a rugged and reliable solution for power electronics designs |
Infineon |
6,674 |
|
IRGPC40S
|
High durability IGBT chip |
Infineon |
9,918 |
|
IRGP50B60PD1PBF
|
CH 600V 75A 390W 3-Pin(3+Tab) TO-247AC Tube |
Infineon |
7,780 |
|
IRGP35B60PDPBF
|
Tube packaging of Transistor IGBT Chip with N-Channel, 600V 60A 308W |
Infineon |
5,263 |
|
IRG4PH40K
|
Transistor IGBT Chip N-Channel 1200V 30A 160W TO-247AC Tube |
Infineon Technologies |
8,962 |
|
IRG4PH30KD
|
Insulated Gate Bipolar Transistor, IRG4PH30KD |
Infineon Technologies |
5,447 |
|
IRG4PC30S
|
Three-Pin TO-247AC Trans IGBT Chip |
Infineon Technologies |
9,505 |
|
IKW40T120
|
Insulated Gate Bipolar Transistors |
Infineon |
9,779 |
|
IKW25N120T2
|
Featuring a voltage rating of 1200 volts and a current rating of 50 amps |
Infineon |
5,949 |
|
IKW20N60T
|
Insulated Gate Bipolar Transistor with 650V voltage rating, 20A current rating, and 1.5V threshold voltage in TO247-3 package |
Infineon |
8,365 |
|
SGW30N60HS
|
IGBT Transistors with High Speed NPT Technology, 30 Amps and 600 Volts |
Infineon |
6,232 |
|
NGTB40N120IHLWG
|
Trans IGBT Chip N-CH 1200V 80A 260W 3-Pin(3+Tab) TO-247 Tube |
onsemi |
6,061 |
|
NGTB30N120IHSWG
|
Trans IGBT Chip N-CH 1200V 60A 192W 3-Pin(3+Tab) TO-247 Tube |
onsemi |
6,377 |
|
NGTB25N120LWG
|
Trans IGBT Chip |
Onsemi |
9,438 |
|
NGTB25N120IHLWG
|
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip |
onsemi |
8,320 |
|
NGTB15N120IHLWG
|
Trans IGBT Chip N-CH 1200V 30A 250W 3-Pin(3+Tab) TO-247 Tube |
onsemi |
9,462 |
|
IKW75N65ES5
|
Full Current Rated RAPID 1 diode IGBT for High Speed Soft Switching |
Infineon |
8,016 |
|