|
IXTH6N150
|
Trans MOSFET N-CH 1.5KV 6A 3-Pin(3+Tab) TO-247 |
IXYS |
9,153 |
|
|
STW12NK95Z
|
TO-247 Package SuperMESH Power MOSFET with N-Channel |
Stmicroelectronics |
5,404 |
|
|
DSSK80-006B
|
THROUGH-HOLE SCHOTTKY DIODE 40A 60V TO247AD |
Ixys |
8,331 |
|
|
IXFH15N100Q
|
IXFH15N100Q MOSFET |
IXYS |
6,738 |
|
|
HGTG11N120CN
|
1200V voltage rating |
Onsemi |
6,681 |
|
|
IXTH40N30
|
MOSFETs ROHS TO-247 IXTH40N30 |
Littelfuse |
8,766 |
|
|
APT70SM70B
|
Silicon Carbide N-Channel Power MOSFET, 700 Volts, 58 Amperes, TO-247 Enclosure |
Microsemi Corporation |
6,518 |
|
|
STW30N80K5
|
Trans MOSFET N-CH 800V 24A 3-Pin(3+Tab) TO-247 Tube |
ST |
5,631 |
|
|
IKW25N120H3
|
TO-247 Tube package with 3 pins and a tab for easy mounting and connection |
Infineon |
7,146 |
|
|
IMW65R027M1HXKSA1
|
MOSFET utilizing Silicon Carbide |
Infineon Technologies |
7,352 |
|
|
STPSC40H12CWL
|
Rectifier Diode Schottky SiC 1.2KV 76A 3-Pin(3+Tab) TO-247 Tube |
STMicroelectronics |
8,526 |
|
|
IXFH120N15P
|
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD |
IXYS |
4,357 |
|
|
STGW39NC60VD
|
STMICROELECTRONICS - STGW39NC60VD - IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins |
STMicroelectronics |
8,599 |
|
|
APT8075BN
|
The APT8075BN model is created by Microchip Technology |
Microchip |
7,707 |
|
|
UJ3N120035K3S
|
Silicon carbide JFET with a voltage rating of 1200V and on-resistance of 35mOhms |
Qorvo |
8,402 |
|
|
STW15N80K5
|
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
ST |
8,428 |
|
|
IXFR44N50Q
|
500V rated voltage N Channel MOSFET with a maximum current of 34A |
IXYS |
5,450 |
|
|
STW40N65M2
|
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
ST |
3,794 |
|
|
IXFH24N80P
|
TO-247AD Plastic Packaged Power FET featuring 24A Drain Current, 800V Voltage Rating, N-Channel Design, and 0.4ohm On-Resistance |
Littelfuse |
5,894 |
|
|
IXFR140N30P
|
MOSFET IXFR140N30P in N-type configuration, packaged in ISOPLUS247 |
IXYS |
7,564 |
|
|
IXFH120N20P
|
20A N-channel power MOSFET designed for high efficiency applications |
IXYS |
5,451 |
|
|
HUF75639G3
|
MOSFET 56a 100V N-Ch UltraFET .25 Ohm |
onsemi |
9,325 |
|
|
IXYH50N120C3D1
|
IXYH50N120C3D1 - Transistor IGBT chip with 1200V voltage rating, 90A current rating, and 625W power dissipation in TO-247AD package |
IXYS |
9,793 |
|
|
STW68N60M6
|
Trans MOSFET N-CH 600V 63A 3-Pin(3+Tab) TO-247 Tube |
ST |
7,026 |
|
|
IXFH220N20X3
|
200V 220A 960W MOSFET |
IXYS |
9,923 |
|
|
IXTH220N20X4
|
Discrete MOSFET with 220A and 200V |
IXYS |
9,333 |
|
|
IXFH150N30X3
|
The product description for IXFH150N30X3 includes an N-channel MOSFET with ultra junction in a quantity of 3 |
IXYS |
6,607 |
|
|
IXFH100N30X3
|
An N-MOSFET transistor of X3-Class |
IXYS |
6,756 |
|
|
MSC035SMA070B
|
It has a threshold voltage of 2.7V at 2mA and comes in a TO-247-3 package |
Microchip Technology |
9,557 |
|
|
MSC050SDA120B
|
Diode Schottky SiC 1.2KV 109A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
5,864 |
|
|
MSC035SMA170B
|
1700V Silicon Carbide (SiC) MOSFET |
Microchip Technology |
8,973 |
|
|
MSC025SMA120B
|
MSC025SMA120B MOSFET: Harness the power of Silicon Carbide (SiC) with this 1200-volt device |
Microchip Technology |
5,084 |
|
|
MSC080SMA120B
|
SiC N-Channel MOSFET 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube |
Microchip Technology |
6,289 |
|
|
MSC015SMA070B
|
MSC015SMA070B, also known as Silicon Carbide MOSFETs, are cutting-edge semiconductor devices designed for high-performance applications |
Microchip Technology |
8,346 |
|
|
IXFH22N65X2
|
High current 650V N-channel power MOSFET |
IXYS |
7,409 |
|
|
IXTH34N65X2
|
IXTH34N65X2 - Power Field-Effect Transistor |
IXYS |
7,311 |
|
|
IXTH48N65X2
|
IXTH48N65X2: Power Field-Effect Transistor product details |
IXYS |
7,032 |
|
|
LSIC1MO170E1000
|
Field-Effect Transistor for High Power |
Littelfuse |
7,938 |
|
|
IXFH60N65X2
|
MOSFET IXFH60N65X2, featuring Ultra Junction X2 technology, offers 650V voltage capacity and 60A current handling capability |
IXYS |
6,538 |
|
|
IXFH12N90
|
High-Voltage MOSFET, 12 Amperes, Low Resistance |
Littelfuse |
6,261 |
|
|
TIP141G
|
Trans Darlington NPN 80V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube |
onsemi |
8,320 |
|
|
STW21NM50N
|
Tube packaging for STW21NM50N MOSFET transistor |
Stmicroelectronics |
9,346 |
|
|
STW20NA50
|
Silicon N-Channel Power MOSFET with 0.27ohm Resistance |
Stmicroelectronics |
5,427 |
|
|
MTW32N20EG
|
Electronic component, power field-effect transistor, 200 volts, 32 amperes, three-pin TO-247 casing |
Onsemi |
5,525 |
|
|
IXFH12N100
|
TO-247AD N-Channel Power MOSFETs with Fast Intrinsic Diodes in Standard Series, RoHS, 60V - 1200V |
IXYS |
9,110 |
|
|
IXFH10N100P
|
MOSFET with a 10 amp current rating and 1000V voltage capability |
IXYS |
9,112 |
|
|
IXFH9N80
|
TO-247 Packaging with 3 Pins |
IXYS |
9,083 |
|
|
IXFH58N20
|
The IXFH58N20 MOSFET is engineered for robust performance in various power circuitry |
IXYS |
8,271 |
|
|
IXFH32N50Q
|
IXFH32N50Q: N-Channel MOSFET in TO-247AD Package |
Littelfuse |
9,345 |
|
|
IXFH12N100Q
|
N-Channel power MOSFET with a maximum voltage rating of 1kV and a current rating of 12A in a TO-247AD package |
IXYS |
7,309 |
|
